منابع مشابه
Organic semiconductors for organic field-effect transistors.
The advantages of organic field-effect transistors (OFETs), such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organ...
متن کاملNovel butterfly pyrene-based organic semiconductors for field effect transistors.
Novel butterfly pyrene derivatives functionalized with trifluoromethylphenyl and thienyl aromatic groups in the 1-, 3-, 6- and 8-positions of pyrene cores and have been synthesized by Suzuki coupling reactions, and their crystal structures, optical and electrochemical properties investigated; additionally, the field effect transistor using as the active material exhibited a p-type performance.
متن کاملTwo-dimensional semiconductors for transistors
| In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited by the rate at which heat, generated from static power, is dissipated. The increase in static power and the leakage of current between the source and drain electrodes that causes this increase, are referred ...
متن کاملTetrabenzoporphyrin Organic Semiconductors for Flexible Organic Thin Film Transistors and Circuits
Organic semiconductors present several technological advantages as the active materials in the development of new, flexible electronics. Here we provide an overview of current developments in organic thin-film field-effect transistor (OFET)[1] and circuit technologies. Discussion and analysis are presented in the context of tetrabenzoporphyrin (TBP), a solution-processable organic semiconductor...
متن کاملInorganic Semiconductors for Printed Transistors
CdSe nanoparticles have been solution deposited and thermally processed into thin film transistor channels, demonstrating for the first time that an inorganic semiconductor can be printed. A peak field effect mobility of 2.05 cmVAs 1 was observed for a device processed at 350 'C. The highest ON/OFF ratio, found in a different device, was 8.6x10 3 for a 10 to -10 V gate sweep at a drain-source v...
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ژورنال
عنوان ژورنال: Materials Today
سال: 2007
ISSN: 1369-7021
DOI: 10.1016/s1369-7021(07)70017-2